SI4482DY-T1-E3 View Datasheet(PDF) - VBsemi Electronics Co.,Ltd
Part Name
Description
Manufacturer
SI4482DY-T1-E3 Datasheet PDF : 9 Pages
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SI4482DY-T1-E3
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.20
10
TJ = 150 °C
0.16
ID = 5 A
1
0.12
0.1
TJ = 25 °C
0.08
TJ = 25 °C
0.01
0.04
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TJ = 125 °C
0.001
0
1.0
0.2
0.4
0.6
0.8
1
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.0
ID = 5 mA
- 0.5
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
120
80
- 1.0
40
- 1.5
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature ( C)
Threshold Voltage
100
Limited by RDS(on)*
10
1
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
0.1
1s
TA = 25 °C
Single Pulse
10 s
0.01
DC
0.01
0.1
1
10
100 1000
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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