SI4483EDY-T1-E3 View Datasheet(PDF) - VBsemi Electronics Co.,Ltd
Part Name
Description
Manufacturer
SI4483EDY-T1-E3 Datasheet PDF : 9 Pages
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SI4483EDY-T1-E3
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
TJ = 150 °C
10
0.08
TJ = 25 °C
1
0.06
www.VBsemi.tw
ID = 10 A
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
ID = 250 µA
0.6
0.4
ID = 5 mA
0.2
0.0
- 0.2
0.04
0.02
TJ = 125 °C
TJ = 25 °C
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
170
136
102
68
34
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
0.01
0.01
TA = 25 °C
Single Pulse
0.1
1
DC
BVDSS
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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4
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