AN609 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
AN609 Datasheet PDF : 9 Pages
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AN609
Vishay Siliconix
Appendix A
SI7390DP_RC R-C THERMAL MODEL PARAMETERS
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFETs"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the MOSFET.
R-C values for the electrical circuit in the Foster/Tank
configuration are included. The corresponding values
for the Cauer/Filter configuration are available upon
request.
R-C THERMAL MODEL FOR TANK CONFIGURATION
T(Junction)
RT1
RT2
RT3
RT4
T(Ambient)
CT1
CT2
CT3
CT4
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
RT1
2.0964
18.1348 u
RT2
9.0489
713.7923 m
RT3
8.0177
1.3126
RT4
50.6167
1.1896
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
CT1
24.2346 m
81.2397 u
CT2
558.4598 m
673.3554 u
CT3
70.7118 m
15.6345 m
CT4
1.4427
6.7185 m
Foot
N/A
N/A
N/A
N/A
Foot
N/A
N/A
N/A
N/A
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number 73554
07-Oct-05
www.vishay.com
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