AN609 View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

Manufacturer

AN609

Thermal Simulation of Power MOSFETs on the P-Spice Platform

Vishay Semiconductors 

AN609

Vishay Siliconix

R-C THERMAL MODEL FOR FILTER CONFIGURATION

T(Junction)

RF1

CF1

RF2

CF2

RF3

RF4

CF3

CF4

T(Ambient)

GND

R-C VALUES FOR FILTER CONFIGURATION

Thermal Resistance (°C/W)

Junction to

Ambient

Case

RF1

6.2277

164.8787 n

RF2

7.9322

888.8177 m

RF3

7.6428

1.2671

RF4

47.9015

1.0331

Thermal Capacitance (Joules/°C)

Junction to

Ambient

Case

CF1

16.9231 m

166.0609 u

CF2

156.4465 m

357.5156 u

CF3

2.8690 m

4.6473 m

CF4

1.2888

304.1798 u

Note: NA indicates not applicable

Foot

N/A

N/A

N/A

N/A

Foot

N/A

N/A

N/A

N/A

For a detailed explanation of implementing these values in P-Spice, refer to Application Note #AN8xx http://www.vishay.com/doc?7xxxxx

Reference:

[1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002

www.vishay.com

8

Document Number 73554

07-Oct-05

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