TJ200F04M3L View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

TJ200F04M3L

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Toshiba 

MOSFETs Silicon P-Channel MOS (U-MOS)

TJ200F04M3L

1. Applications

• Automotive

• DC-DC Converters

• Motor Drivers

2. Features

(1) AEC-Q101 qualified

(2) Low drain-source on-resistance: RDS(ON) = 1.45 mΩ (typ.) (VGS = -10 V)

(3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)

(4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)

3. Packaging and Internal Circuit

TJ200F04M3L

TO-220SM(W)

1: Gate

2: Drain (heatsink)

3: Source

©2015-2018

Toshiba Electronic Devices & Storage Corporation

1

Start of commercial production

2014-12

2018-07-24

Rev.6.0

Share Link: