TJ200F04M3L View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

TJ200F04M3L

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Toshiba 

TJ200F04M3L

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

-40

V

Gate-source voltage

VGSS

-20/+10

Drain current (DC)

(Note 1)

ID

-200

A

Drain current (pulsed)

(Note 1)

IDP

-600

Power dissipation

(Tc = 25)

(Note 2)

PD

375

W

Single-pulse avalanche energy

(Note 3)

EAS

924

mJ

Single-pulse avalanche current

IAS

-200

A

Channel temperature

(Note 4)

Tch

175



Storage temperature

(Note 4)

Tstg

-55 to 175

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

©2015-2018

Toshiba Electronic Devices & Storage Corporation

2

2018-07-24

Rev.6.0

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