TJ200F04M3L View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

TJ200F04M3L

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Toshiba 

TJ200F04M3L

6. Electrical Characteristics

6.1. Static Characteristics (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Test Condition

Min Typ. Max Unit

Gate leakage current

IGSS VGS = -20/+10 V, VDS = 0 V





±1

µA

Drain cut-off current

IDSS

VDS = -40 V, VGS = 0 V





-10

Drain-source breakdown voltage

V(BR)DSS ID = -10 mA, VGS = 0 V

-40





V

Drain-source breakdown voltage (Note 5) V(BR)DSX ID = -10 mA, VGS = 10 V

-30





Gate threshold voltage

Vth

VDS = -10 V, ID = -1 mA

-2.0



-3.0

Drain-source on-resistance

RDS(ON) VGS = -6 V, ID = -100 A



1.74 2.6

mΩ

VGS = -10 V, ID = -100 A



1.45 1.8

Note 5: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-

source breakdown voltage is lowered in this mode.

6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)

Characteristics

Input capacitance

Reverse transfer capacitance

Output capacitance

Switching time (rise time)

Switching time (turn-on time)

Switching time (fall time)

Switching time (turn-off time)

Symbol

Test Condition

Ciss

Crss

Coss

tr

ton

tf

toff

VDS = -10 V, VGS = 0 V, f = 1 MHz

See Fig. 6.2.1

Min Typ. Max Unit

 12800 

pF

 1150 

 2400 



14



ns



29





515



 1750 

VDD ≈ -20 V

VGS = 0 V/-10 V

ID = -100 A

RL = 0.2 Ω

RGG = RGS = 4.7 Ω

Duty ≤ 1 %, tw = 10 µs

Fig. 6.2.1 Switching Time Test Circuit

6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)

Characteristics

Total gate charge (gate-source plus

gate-drain)

Gate-source charge 1

Gate-drain charge

Symbol

Test Condition

Min Typ. Max Unit

Qg

VDD ≈ -32 V, VGS = -10 V, ID = -200 A 

460



nC

Qgs1

Qgd



72





130



6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Test Condition

Reverse drain current (DC)

Reverse drain current (pulsed)

Diode forward voltage

(Note 6)

(Note 6)

IDR

IDRP

VDSF



IDR = -200 A, VGS = 0 V

Reverse recovery time

Reverse recovery charge

trr

IDR = -200 A, VGS = 0 V

Qrr

dIDR/dt = 50 A/µs

Note 6: Ensure that the channel temperature does not exceed 175.

Min Typ. Max Unit





-200

A



 -600





1.2

V



90



ns



104



nC

©2015-2018

Toshiba Electronic Devices & Storage Corporation

4

2018-07-24

Rev.6.0

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