NXP Semiconductors
30
s-pars
(dB)
20
(2)
aaa-018504
10
0
-10
(1)
-20
(4)
-30
0
(3)
0.8
1.6
2.4
3.2
4
f (GHz)
VCC= 5 V; Tamb= 25°C; gain mode.
(1) S11
(2) S21
(3) S12
(4) S22
Figure 19. Wideband S-parameters as a function of
frequency; typical values
0
s-pars
(dB)
-10
-20
BGU8062
low-noise high-linearity amplifier
aaa-018505
(3)
(2)
(4)
(1)
-30
-40
0 0.5 1 1.5 2 2.5 3 3.5 4
f (GHz)
VCC= 5 V; Tamb= 25°C; bypass mode.
(1) S11
(2) S21
(3) S12
(4) S22
Figure 20. Wideband S-parameters as a function of
frequency; typical values
0
s-pars
(dB)
-10
aaa-018506
-20
(1)
(4)
(2)
(3)
-30
-40
-50
0 0.5 1 1.5 2 2.5 3 3.5 4
f (GHz)
VCC= 5 V; Tamb= 25°C; isolation mode.
(1) S11
(2) S21
(3) S12
(4) S22
Figure 21. Wideband S-parameters as a function of
frequency; typical values
5
K
4
aaa-018507
3
(3)
(2)
(1)
2
1
0
0
4
8
12
16
20
f (GHz)
VCC= 5 V; gain mode.
(1) Tamb=-40°C
(2) Tamb= +25°C
(3) Tamb= +95°C
Figure 22. Rollett stability factor as a function of
frequency; typical values
BGU8062
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 24 January 2017
© NXP Semiconductors N.V. 2017. All rights reserved.
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