BGU8062 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BGU8062 Datasheet PDF : 18 Pages
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NXP Semiconductors
BGU8062
low-noise high-linearity amplifier
4 Quick reference data
Table 1. Quick reference data
f = 1900 MHz; VCC = 5 V; Tamb = 25 °C; input and output 50 Ω; unless otherwise specified. All RF parameters are measured
on an application board with the circuit as shown in Figure 29 and components listed in Table 9 implemented. This board is
optimized for f = 1900 MHz.
Symbol Parameter
Conditions
Min Typ Max Unit
ICC
supply current
LNA enable; bypass off
LNA disable; bypass on
- 70 85 mA
- 3 5 mA
Gass
NF
associated gain
noise figure
LNA enable; bypass off
LNA disable; bypass on
LNA enable; bypass off
17 18.5 20 dB
-2.0 -1.6 -
dB
[1] -
1.3 2.0 dB
PL(1dB)
IP3O
output power at 1 dB gain compression
output third-order intercept point
LNA enable; bypass off
2-tone; tone spacing = 1 MHz;PL =
5 dBm per tone
18.5 20 -
dBm
• LNA enable; bypass off
• LNA disable; bypass on
33.5 36 -
[2] 40 44 -
dBm
dBm
[1] Connector and Printed-Circuit Board (PCB) losses have been de-embedded.
[2] Guaranteed by device design; not tested in production.
5 Ordering information
Table 2. Ordering information
Type
Package
number
Name
Description
BGU8062
HVSON10 plastic thermal enhanced very thin small outline package;no leads; 10
terminals; body 3 × 3 × 0.85 mm
Version
SOT650-2
6 Block diagram
Figure 1. Block diagram
Vctrl2
i.c.
RFIN
i.c.
n.c.
Bias
Vctrl1
i.c.
RFOUT
n.c.
VCC
aaa-023265
BGU8062
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 24 January 2017
© NXP Semiconductors N.V. 2017. All rights reserved.
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