BGU8062 View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

BGU8062

low-noise high-linearity amplifier

NXP Semiconductors. 

NXP Semiconductors

BGU8062

low-noise high-linearity amplifier

8 Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). See Section 16.3 "Disclaimers", paragraph "Limiting

values".

Symbol Parameter

Conditions

Min Max Unit

VCC

supply voltage

VI(CTRL1) input voltage on pin CTRL1

VI(CTRL2) input voltage on pin CTRL2

Pi(RF)CW continuous waveform RF input power

Tstg

storage temperature

Tj

junction temperature

P

power dissipation

VESD

electrostatic discharge voltage

Tcase ≤ 125 °C

Human Body Model (HBM); according to

ANSI/ESDA/JEDEC standard JS-001-2010

-6

V

- 3.6 V

- 3.6 V

- 20 dBm

-40 +150 °C

- 150 °C

[1] -

510 mW

- 2.0 kV

Charged Device Model (CDM); according

to JEDEC standard 22-C101B

- 1.0 kV

[1] Case is ground solder pad.

9 Recommended operating conditions

Table 5. Characteristics

Symbol Parameter

VCC

supply voltage

Z0

characteristic impedance

Conditions

Min Typ Max Unit

4.75 5

5.25 V

-

50 -

Ω

10 Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter

Rth(j-case) thermal resistance from junction to case

Conditions

Typ Unit

[1] [2] 55 K/W

[1] Case is ground solder pad.

[2] Thermal resistance measured using infrared measurement technique, device mounted on application board and placed in still air.

11 Characteristics

Table 7. Characteristics

f = 1900 MHz; VCC = 5 V; Tamb = 25 °C; input and output 50 Ω; unless otherwise specified. All RF parameters are measured

on an application board with the circuit as shown in Figure 29 and components listed in Table 9 implemented. This board is

optimized for f = 1900 MHz.

Symbol Parameter

Conditions

Min Typ Max Unit

ICC

supply current

LNA enable; bypass off

LNA disable; bypass on

- 70 85 mA

- 3 5 mA

BGU8062

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 2 — 24 January 2017

© NXP Semiconductors N.V. 2017. All rights reserved.

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