BTA312B-600CT View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BTA312B-600CT Datasheet PDF : 12 Pages
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NXP Semiconductors
BTA312B series CT and ET
12 A Three-quadrant triacs high commutation high temperature
3. Ordering information
Table 2. Ordering information
Type number Package
Name
Description
Version
BTA312B-600CT D2PAK
BTA312B-800ET
plastic single-ended surface-mounted package (D2PAK); 3-leads (one lead SOT404
cropped)
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
repetitive peak off-state voltage
BTA312B-600CT
BTA312B-800ET
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 126 °C; see
Figure 4 and 5
ITSM
non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to
surge; see Figure 2 and 3
t = 20 ms
t = 16.7 ms
I2t
I2t for fusing
t = 10 ms
dIT/dt
IGM
PGM
PG(AV)
Tstg
Tj
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
over any 20 ms period
Min
[1] -
-
-
-
-
-
-
-
-
-
−40
-
Max Unit
600
V
800
V
12
A
95
A
105
A
45
A2s
100
A/µs
2
A
5
W
0.5
W
+150 °C
150
°C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
BTA312B_SER_CT_ET_1
Product data sheet
Rev. 01 — 11 April 2007
© NXP B.V. 2007. All rights reserved.
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