BUS13 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
BUS13 Datasheet PDF : 2 Pages
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isc Silicon NPN Power Transistor
BUS13
DESCRIPTION
·
·High Switching Speed
·High Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor controls
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
850
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
30
A
IB
Base Current
6
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
9
A
175
W
200
℃
Tstg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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