BUS13 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
BUS13 Datasheet PDF : 2 Pages
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isc Silicon NPN Power Transistor
BUS13
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB= 0
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 8A; IB= 1.6A
VCE=VCESMmax; VBE= 0
VCE= VCESMmax;VBE= 0;TC= 125℃
VEB= 9V; IC= 0
1.6
V
1
4
mA
10 mA
hFE
DC Current Gain
IC= 2A ; VCE= 5V
15
50
Switching Times
ton
Turn-on Time
1.0 μs
ts
Storage Time
IC= 8A;IB1= -IB2= 1.6A
4.0 μs
tf
Fall Time
0.8 μs
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
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