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B5818W View Datasheet(PDF) - Galaxy Semi-Conductor

Part Name
Description
Manufacturer
B5818W
BILIN
Galaxy Semi-Conductor BILIN
B5818W Datasheet PDF : 4 Pages
1 2 3 4
BL Galaxy Electrical
Production specification
Schottky Barrier Diode
FEATURES
z Extremely low VF.
z Low stored change,majority carrier
conduction.
z Low power loss/high efficient
Pb
Lead-free
B5817W-B5819W
APPLICATIONS
z For Use In Low Voltage, High Frequency Inverters.
z Free Wheeling, And Polarity Protection Applications.
ORDERING INFORMATION
Type No.
Marking
B5817W
SJ
B5818W
SK
B5819W
SL
SOD-123
Package Code
SOD-123
SOD-123
SOD-123
MAXIMUM RATING @ Ta=25unless otherwise specified
Parameter
symbol B5817W
Non-Repetitive Peak reverse voltage
VRSM
24
B5818W
36
B5819W Unit
48
V
Peak repetitive Peak reverse voltage
VRRM
Working Peak Reverse voltage
VRWM
20
30
40
V
DC Reverse Voltage
VR
RMS Reverse Voltage
Average Rectified output Current
Peak forward surge current@=8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Storage temperature
VR(RMS)
Io
IFSM
Pd
RθJA
TJ,TSTG
14
21
1
25
250
80
-65~+125
28
V
A
A
mW
/W
Document number: BL/SSSKA006
Rev.A
www.galaxycn.com
1

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