BTD1664M3 View Datasheet(PDF) - Cystech Electonics Corp.
Part Name
Description
Manufacturer
BTD1664M3 Datasheet PDF : 4 Pages
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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1664M3
Spec. No. : C223M3
Issued Date : 2003.05.26
Revised Date :
Page No. : 1/4
Features
• The BTD1664M3 is designed for general purpose low frequency power amplifier applications.
• Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA
• Complementary to BTB1132M3
Symbol
Outline
BTD1664M3
SOT-89
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
Pd
Pd
Tj
Tstg
Note : 1. Single pulse, Pw = 20ms, duty ≤ 2%.
2. When mounted on a 40 ×40 ×0.7 mm ceramic board.
Limits
Unit
40
V
20
V
5
V
800
mA
1.5 (Note 1)
A
0.5
W
2 (Note 2)
W
150
°C
-55~+150
°C
BTD1664M3
CYStek Product Specification
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