MMBT4401
●ELECTRICAL CHARACTERISTICS (Ta= 25℃)
OFF CHARACTERISTICS
Characteristic
Symbol
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, I B = 0)
VBR(CEO)
Collector–Base Breakdown Voltage
VBR(CBO)
(I C = 0.1mAdc, I E = 0)
Emitter–Base Breakdown Voltage
VBR(EBO)
(I E = 0.1mAdc, I C = 0)
Collector Cutoff Current
ICEX
( V CE = 35 Vdc, V EB = 0.4Vdc)
Base Cutoff Current
IBEV
( V CE = 35 Vdc, V EB = 0.4Vdc)
ON CHARACTERISTICS (Note 3.)
DC Current Gain
hFE
(I C = 0.1 mAdc, V CE = 1.0 Vdc)
(I C = 1.0 mAdc, V CE = 1.0 Vdc)
(I C = 10 mAdc, V CE = 1.0 Vdc)
(I C = 150 mAdc, V CE = 1.0 Vdc)
(I C = 500 mAdc, V CE = 2.0 Vdc)
Collector–Emitter Saturation Voltage(3)
(I C = 150 mAdc, I B = 15 mAdc)
VCE(sat)
(I C = 500mAdc, I B = 50 mAdc)
Base–Emitter Saturation Voltage
(I C = 150 mAdc, I B = 15 mAdc)
VBE(sat)
(I C = 500mAdc, I B = 50 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Characteristic
Symbol
Current–Gain — Bandwidth Product
fT
(I C = 20mAdc, V CE= 20Vdc, f = 100MHz)
Collector–Base Capacitance
Ccb
(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)
Emitter–Base Capacitance
Ceb
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
Input Impedance
hie
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
hre
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
hfe
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Output Admittance
hoe
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
(V CC = 30 Vdc, V EB=
td
2.0Vdc,I C = 150 mAdc, I
Rise Time
B1 = 15 mAdc)
tr
Storage Time
(V CC = 30 Vdc, I C =
ts
150 mAdc,I B1 = I B2 =
Fall Time
15 mAdc)
tf
3. Pulse Test: Pulse Width <300 μs, Duty Cycle <2.0%.
Min.
40
60
6
–
–
20
40
80
100
40
–
–
0.75
–
Min.
250
–
–
1
0.1
40
1
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
Max.
–
–
–
0.1
0.1
–
–
–
300
–
0.4
0.75
0.95
1.2
Max.
–
6.5
30
15
8
500
30
15
20
225
30
Unit
V
V
V
μA
μA
V
V
Unit
MHz
pF
pF
kΩ
X 10 –4
μmhos
ns
Rev : 01.06.2014
2/5
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