SS8050 View Datasheet(PDF) - Shanghai Leiditech Electronic Technology Co., Ltd
Part Name
Description
Manufacturer
SS8050 Datasheet PDF : 3 Pages
| |||
SS8050
General Purpose Transistors
NPN Silicon
FEATURE
ƽHigh current capacity in compact package.
IC =1.5 A.
ƽEpitaxial planar type.
ƽNPN complement: L8050H
ƽPb-Free Package is available.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
SS8050HPLT1G
Marking
S-SS8050HPLT1G 1HA
Shipping
3000/Tape&Reel
SS8050HPLT3G S-SS8050HPLT3G 1HA
10000/Tape&Reel
SS8050HQLT1G S-SS8050HQLT1G 1HC
3000/Tape&Reel
SS8050HQLT3G S-SS8050HQLT3G 1HC
10000/Tape&Reel
SS8050HRLT1G
SS8050HRLT3G
SS8050HSLT1G
SS8050HSLT3G
S-SS8050HRLT1G
S-SS8050HRLT3G
S-SS8050HSLT1G
S-SS8050HSLT3G
1HE
1HE
1HG
1HG
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
Dimensions SOT-23
Pin Configuration
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
VCEO
VCBO
VEBO
IC
Max
25
40
5
1500
Unit
V
V
V
mAdc
Symbol
PD
R θJ A
PD
R θJ A
T j,T St g
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
-55 to +150
°C/W
°C
Rev : 01.06.2015
1/3
www.leiditech.com
Share Link: 