S9012 View Datasheet(PDF) - Diode Semiconductor Korea

Part Name

Description

Manufacturer

S9012

PNP Silicon Epitaxial Planar Transistor

Diode Semiconductor Korea 

Diode Semiconductor Korea

PNP Silicon Epitaxial Planar Transistor

S9012

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0

-40

V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0

-25

V

Emitter-base breakdown voltage

V(BR)EBO IE=-100μA,IC=0

-5

V

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

ICBO

ICEO

IEBO

hFE

VCE(sat)

VBE(sat)

fT

VCB=-40V,IE=0

VCE=-20V,IB=0

VEB=-5V,IC=0

VCE=-1V,IC=-50mA

120

IC=-500mA, IB= -50mA

IC=-500mA, IB= -50mA

VCE=-6V, IC= -20mA

f=30MHz

150

-0.1 μA

-0.1 μA

-0.1 μA

400

-0.6 V

-1.2 V

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

5

pF

CLASSIFICATION OF hFE(1)

Rank

L

Range

120-200

MARKING

H

200-350

2T1

J

300-400

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