BDT82(2012) View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
Manufacturer
BDT82 Datasheet PDF : 4 Pages
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PNP BDT82 – BDT84 – BDT86 – BDT88
SILICON POWER TRANSISTORS
The BDT82 – BDT84 – BDT86 – BDT88 are epitaxial base transistors in a TO-220 plastic
envelope.
They are intended for use in audio output stages and general amplifier and switching
appications.
NPN complements are BDT81 – BDT83 – BDT85 – BDT87.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage -IB = 0
VCBO
Collector-Base Voltage
-IE = 0
VEBO
IC
ICM
IB
Pt
TJ
TStg
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
-IC = 0
@ TC = 25°
THERMAL CHARACTERISTICS
Value
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
-60
-80
-100
-120
-60
-80
-100
-120
-7
-15
-20
-4
125
150
-65 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Symbol
Ratings
RthJa
RthJmb
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Mounting Base
09/11/2012
COMSET SEMICONDUCTORS
Value
70
1
Unit
K/W
K/W
1|4
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