DPG10I200PM View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
Manufacturer
DPG10I200PM Datasheet PDF : 5 Pages
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DPG10I200PM
Fast Diode
Symbol
VRSM
VRRM
IR
VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
average forward current
VR = 200 V
VR = 200 V
IF = 10 A
IF = 20 A
IF = 10 A
IF = 20 A
TC = 125°C
rectangular
d = 0.5
VF0
rF
R thJC
R thCH
Ptot
I FSM
CJ
I RM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
t = 10 ms; (50 Hz), sine; VR = 0 V
VR = 150 V f = 1 MHz
t rr
reverse recovery time
IF = 10 A; VR = 130 V
-diF/dt = 200 A/µs
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 150°C
TVJ = 175°C
Ratings
min. typ. max. Unit
200 V
200 V
1 µA
0.06 mA
1.27 V
1.45 V
0.98 V
1.17 V
10 A
TVJ = 175°C
TC = 25°C
TVJ = 45°C
TVJ = 25°C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 125 °C
0.50
15
3
5.5
35
45
0.74 V
17.7 mΩ
4.4 K/W
K/W
35 W
140 A
pF
A
A
ns
ns
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125a
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