CMT06N60 View Datasheet(PDF) - Champion Microelectronic

Part Name

Description

Manufacturer

CMT06N60

POWER FIELD EFFECT TRANSISTOR

Champion Microelectronic 

CMT06N60

POWER FIELD EFFECT TRANSISTOR

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current － Continuous

－ Pulsed

Gate-to-Source Voltage － Continue

－ Non-repetitive

Total Power Dissipation

TO-220

TO-220FP

Operating and Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃

(VDD = 100V, VGS = 10V, IL = 6A, L = 10mH, RG = 25Ω)

Thermal Resistance － Junction to Case

－ Junction to Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

Symbol

ID

IDM

VGS

VGSM

PD

TJ, TSTG

EAS

θJC

θJA

TL

(1) VDD = 50V, ID = 6A

(2) Pulse Width and frequency is limited by TJ(max) and thermal response

Value

6.0

18

±20

±40

125

45

-55 to 150

180

1.0

62.5

260

Unit

A

V

V

W

℃

mJ

℃/W

℃

ORDERING INFORMATION

Part Number

CMT06N60N220

CMT06N60N220FP

Package

TO-220

TO-220FP

TEST CIRCUIT

Test Circuit – Avalanche Capability

2006/10/11 Rev. 1.2

Champion Microelectronic Corporation

Page 2

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