CMT06N60N220FP View Datasheet(PDF) - Champion Microelectronic
Part Name
Description
Manufacturer
CMT06N60N220FP Datasheet PDF : 6 Pages
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CMT06N60
POWER FIELD EFFECT TRANSISTOR
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
(VDS = 480 V, VGS = 0 V, TJ = 125℃)
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 3.5A) *
Forward Transconductance (VDS = 15 V, ID = 3.0A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 300 V, ID = 6.0 A,
VGS = 10 V,
RG = 9.1Ω) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 300 V, ID = 6.0 A,
VGS = 10 V)*
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 6.0 A,
dIS/dt = 100A/μs)
* Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
LS
CMT06N60
Min
Typ
Max
600
100
50
100
100
2.0
4.0
1.2
3.4
1498
2100
158
220
29
60
14
30
19
40
40
80
26
55
35.5
50
8.1
14.1
4.5
7.5
Units
V
μA
nA
nA
V
Ω
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
VSD
0.83
1.2
V
ton
**
ns
trr
266
ns
2006/10/11 Rev. 1.2
Champion Microelectronic Corporation
Page 3
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