MMIX4B12N300 View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
Manufacturer
MMIX4B12N300 Datasheet PDF : 6 Pages
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Preliminary Technical Information
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
(Electrically Isolated Tab)
MMIX4B12N300
C1
G1
E1C3
G3
C2
G2
E2C4
G4
E3E4
Symbol Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, VGE = 19V, 1ms
10ms
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 20Ω
Clamped Inductive Load
PC
TJ
TJM
Tstg
TL
TSOLD
FC
VISOL
Weight
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Force
50/60Hz, 1 Minute
Maximum Ratings
3000
V
3000
V
± 20
V
± 30
V
26
A
11
A
98
A
52
A
ICM = 98
A
1500
V
125
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
50..200 / 11..45
4000
Nm/lb.in.
V~
8
g
VCES =
IC110 =
VCE(sat) ≤
3000V
11A
3.2V
C1
G1
E1C3
G3
Isolated Tab
G3
E1C3
G1
C1
G = Gate
C = Collector
C2
G2
E2C4
G4
E3E4
E3E4
G4
E2C4
G2
C2
E = Emitter
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z Isolated Mounting Surface
z 4000V~ Electrical Isolation
z High Blocking Voltage
z High Peak Current Capability
z Low Saturation Voltage
Advantages
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
BVCES
IC = 250μA, VGE = 0V
3000
V
VGE(th)
IC = 250μA, VCE = VGE
3.0
5.0 V
ICES
VCE = 0.8 • VCES, VGE = 0V
Note 2, TJ = 125°C
25 μA
1 mA
IGES
VCE = 0V, VGE = ± 20V
±100 nA
VCE(sat)
IC = IC90, VGE = 15V, Note 1
2.8
3.2 V
TJ = 125°C
3.5
V
z Low Gate Drive Requirement
z High Power Density
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z Capacitor Discharge Circuits
© 2012 IXYS CORPORATION, All Rights Reserved
DS100392A(06/12)
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