DTC144TE
NPN Digital Transistor
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
Symbol Parameter
Test Conditions
V(BR)CBO Collector-base breakdown voltage
IC = 50μA
V(BR)CEO Collector-emitter breakdown voltage IC = 1 mA
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IE = 50μA
VCB = 50 V , IE = 0
VEB = 4 V , IC = 0
VCE = 5 V , IC = 1 mA
IC/IB = 50 mA / 5 mA
R1
Input resistance
VCE = -6 V, IC = -20 mA
fT
Transition frequency
VCE = 10 V , IE = 5 mA
f = 100MHz
MIN
50
50
5
100
32.9
TYP MAX UNIT
V
V
V
0.5
μA
0.5
μA
300
600
0.3
V
47
61.1
kΩ
250
MHz
■RATINGS AND CHARACTERISTIC CURVES
FIG.1 – DC CURRENT GAIN VS. COLLECTOR
CURRENT
FIG.2 –COLLECTOR-EMITTER SATURATION
VOLTAGEVS. COLLECTOR CURRENT
Publication Order Number: [DTC144TE]
© Bruckewell Technology Corporation Rev. A -2014