NESG2021M16 View Datasheet(PDF) - California Eastern Laboratories.

Part Name

Description

Manufacturer

NESG2021M16

NPN SILICON GERMANIUM RF TRANSISTOR

California Eastern Laboratories. 

NESG2021M16

ELECTRICAL CHARACTERISTICS (TA = +25C)

Parameter

DC Characteristics

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

RF Characteristics

Gain Bandwidth Product

Insertion Power Gain

Noise Figure (1)

Noise Figure (2)

Associated Gain (1)

Associated Gain (2)

Reverse Transfer Capacitance

Maximum Stable Power Gain

Symbol

Test Conditions

ICBO VCB = 5 V, IE = 0 mA

IEBO VEB = 1 V, IC = 0 mA

hFE Note 1 VCE = 2 V, IC = 5 mA

fT VCE = 3 V, IC = 10 mA, f = 2 GHz

S21e2 VCE = 3 V, IC = 10 mA, f = 2 GHz

NF VCE = 2 V, IC = 3 mA, f = 2 GHz,

ZS = ZSopt, ZL = ZLopt

NF VCE = 2 V, IC = 3 mA, f = 5.2 GHz,

ZS = ZSopt, ZL = ZLopt

Ga VCE = 2 V, IC = 3 mA, f = 2 GHz,

ZS = ZSopt, ZL = ZLopt

Ga VCE = 2 V, IC = 3 mA, f = 5.2 GHz,

ZS = ZSopt, ZL = ZLopt

Cre Note 2 VCB = 2 V, IE = 0 mA, f = 1 MHz

MSG Note VCE = 3 V, IC = 10 mA, f = 2 GHz

3

Gain 1 dB Compression Output Power

Output 3rd Order Intercept Point

PO (1 dB) VCE = 3 V, IC (set) = 12 mA (RF OFF),

f = 2 GHz, ZS = ZSopt, ZL = ZLopt

OIP3

VCE = 3 V, IC (set) = 12 mA (RF OFF),

f = 2 GHz, ZS = ZSopt, ZL = ZLopt

Notes 1. Pulse measurement: PW  350 s, Duty Cycle  2%

2. Collector to base capacitance when the emitter grounded

3. MSG = S21

S12

hFE CLASSIFICATION

<R>

Rank

Marking

hFE Value

FB/YFB

zE

130 to 260

MIN. TYP. MAX. Unit





100

nA





100

nA

130

190

260



20

25



GHz

17.0

19.0



dB



0.9

1.2

dB



1.3



dB

15.0

18.0



dB



10.0



dB



0.1

0.2

pF

20.0

22.5



dB



9



dBm



17



dBm

2

Data Sheet PU10393EJ03V0DS

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