NESG2021M16 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
NESG2021M16 Datasheet PDF : 12 Pages
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NESG2021M16
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current
DC Current Gain
IEBO VEB = 1 V, IC = 0 mA
h Note 1
FE
VCE = 2 V, IC = 5 mA
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Associated Gain (1)
Associated Gain (2)
Reverse Transfer Capacitance
Maximum Stable Power Gain
fT VCE = 3 V, IC = 10 mA, f = 2 GHz
⏐S21e⏐2 VCE = 3 V, IC = 10 mA, f = 2 GHz
NF VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
NF VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
Ga VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
Ga VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
C Note 2
re
VCB = 2 V, IE = 0 mA, f = 1 MHz
MSG Note 3 VCE = 3 V, IC = 10 mA, f = 2 GHz
Gain 1 dB Compression Output Power
PO (1 dB) VCE = 3 V, IC (set) = 12 mA (RF OFF),
f = 2 GHz, ZS = ZSopt, ZL = ZLopt
Output 3rd Order Intercept Point
OIP3
VCE = 3 V, IC (set) = 12 mA (RF OFF),
f = 2 GHz, ZS = ZSopt, ZL = ZLopt
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG = S21
S12
hFE CLASSIFICATION
<R>
Rank
Marking
hFE Value
FB/YFB
zE
130 to 260
MIN. TYP. MAX. Unit
−
−
100
nA
−
−
100
nA
130
190
260
−
20
25
−
GHz
17.0
19.0
−
dB
−
0.9
1.2
dB
−
1.3
−
dB
15.0
18.0
−
dB
−
10.0
−
dB
−
0.1
0.2
pF
20.0
22.5
−
dB
−
9
−
dBm
−
17
−
dBm
2
Data Sheet PU10393EJ03V0DS
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