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NESG2021M16 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
Manufacturer
NESG2021M16
NEC
NEC => Renesas Technology NEC
NESG2021M16 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NESG2021M16
<R> TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
250
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.3
f = 1 MHz
200
0.2
175
150
100
0.1
50
0
25 50 75 100 125 150
Ambient Temperature TA (°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
0
2
4
6
8
10
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
1
1
0.1
0.1
0.01
0.01
0.001
0.0001
0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 3 V
10
1
0.1
0.01
0.001
0.0001
0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage VBE (V)
Remark The graphs indicate nominal characteristics.
0.001
0.0001
0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
200 μA
30
180 μA
160 μA
25
140 μA
120 μA
20
100 μA
15
80 μA
10
60 μA
40 μA
5
IB = 20 μA
0
1
2
3
4
5
6
Collector to Emitter Voltage VCE (V)
Data Sheet PU10393EJ03V0DS
3

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