NESG2021M16 View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

Manufacturer

NESG2021M16

NPN SILICON GERMANIUM RF TRANSISTOR

NEC => Renesas Technology 

1 000

DC CURRENT GAIN vs.

COLLECTOR CURRENT

VCE = 1 V

100

NESG2021M16

1 000

DC CURRENT GAIN vs.

COLLECTOR CURRENT

VCE = 2 V

100

10

0.1

1 000

1

10

100

Collector Current IC (mA)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

VCE = 3 V

100

10

0.1

1

10

100

Collector Current IC (mA)

10

0.1

1

10

100

Collector Current IC (mA)

Remark The graphs indicate nominal characteristics.

4

Data Sheet PU10393EJ03V0DS

Share Link: