NESG2021M16 View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

Manufacturer

NESG2021M16

NPN SILICON GERMANIUM RF TRANSISTOR

NEC => Renesas Technology 

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

5

30

4

25

Ga

3

20

2

15

1

NF

10

VCE = 1 V,

f = 1 GHz

0

5

1

10

100

Collector Current IC (mA)

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

6

30

5

25

4

Ga

20

3

15

2

10

1

5

NF

VCE = 1 V,

f = 2 GHz

0

0

1

10

100

Collector Current IC (mA)

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

10

25

VCE = 1 V,

f = 5.2 GHz

8

20

6

15

Ga

4

10

2

5

NF

0

0

1

10

100

Collector Current IC (mA)

Remark The graphs indicate nominal characteristics.

NESG2021M16

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

5

30

4

Ga

25

3

20

2

15

1

10

NF

VCE = 2 V,

f = 1 GHz

0

5

1

10

100

Collector Current IC (mA)

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

6

30

5

25

4

Ga

20

3

15

2

10

1

5

NF

VCE = 2 V,

f = 2 GHz

0

0

1

10

100

Collector Current IC (mA)

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

10

25

VCE = 2 V,

f = 5.2 GHz

8

20

6

15

Ga

4

10

2

5

NF

0

0

1

10

100

Collector Current IC (mA)

Data Sheet PU10393EJ03V0DS

9

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