CHUMF4PT View Datasheet(PDF) - CHENMKO CO., LTD.
Part Name
Description
Manufacturer
CHUMF4PT Datasheet PDF : 5 Pages
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CHDTC123E LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
VCC
Supply voltage
VIN
Input voltage
IO
IC(Max.)
DC Output current
NOTE.1
PC
Power dissipation
NOTE.2
TSTG
Storage temperature
MIN.
−
-10
−
−
−
MAX.
50
+20
100
100
150
UNIT
V
V
mA
mW
−55
+150
OC
TJ
Junction temperature
−
150
OC
Note
1. Characteristics of built-in transistor.
2. Each terminal mounter on a recommended land.
2SA2018 CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
BVCEO Collector-emitter breakdown voltage
IC=-1mA
-12
BVCBO Collector-base breakdown voltage
IC=-10uA
-15
BVEBO Emitter-base breakdown voltage
IE=-10uA
-6
ICBO Collector cut-off current
VCB=-15V
−
IEBO Emitter cut-off current
VEB=-6V
−
hFE DC current gain
VCE=-2V,IC=-10mA
270
VCE(sat) Collector-emitter saturation voltage IC=-200mA,IB=-10mA
−
Cob Collector output capacitance
VCB=-10V,IE=0mA,f=1MHZ −
fT
Transition frequency
VCE=-2V,IE=10mA,f=100MHZ −
Note
1.Pulse test: tp≤300uS; δ≤0.02.
TYP.
−
−
−
−
−
−
-100
6.5
260
MAX.
−
−
−
-100
-100
680
-250
−
−
UNIT
V
V
V
nA
nA
−
mV
pF
MHz
CHDTC123E CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
VIoff)
VI(on)
VO(on)
II
IC(off)
G1
R1
R2/R1
fT
PARAMETER
Input off voltage
Input on voltage
Output voltage
Input current
Output current
DC current gain
Input resistor
Resistor ratio
Transition frequency
Note
Pulse test: tp≤300uS; δ≤0.02.
CONDITIONS
IO=100uA; VCC=5.0V
IO=20mA; VO=0.3V
IO=10mA; II=0.5mA
VI=5V
VI=0V; VCC=50V
IO=20mA; VO=5.0V
IE=-5mA, VCE=10.0V
f==100MHz
MIN.
0.5
−
−
−
−
20
1.54
0.8
−
TYP.
−
−
0.1
−
−
−
2.2
1.0
250
MAX.
−
3.0
0.3
3.8
0.5
−
2.86
1.2
−
UNIT
V
V
V
mA
uA
−
KΩ
−
MHz
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