MRW2003 View Datasheet(PDF) - Motorola => Freescale

Part Name

Description

Manufacturer

MRW2003

Microwave Power Transistors

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (continued)

Emitter–Base Breakdown Voltage

(IE = 0.2 mA, IC = 0)

(IE = 0.25 mA, IC = 0)

V(BR)EBO

MRW2001

3.5

—

MRW2003

3.5

—

Vdc

—

—

Collector Cutoff Current

(VCB = 28 V, IE = 0)

MRW2001

ICBO

—

MRW2003

—

—

0.5

mAdc

—

0.5

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mA, VCE = 5.0 V)

(IC = 100 mA, VCE = 5.0 V)

hFE

—

MRW2001

10

—

120

MRW2003

10

—

100

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 28 V, IE = 0, f = 1.0 MHz)

MRW2001

Cob

—

—

4.0

pF

MRW2003

—

—

5.0

FUNCTIONAL TESTS

Common–Base Amplifier Power Gain

(VCE = 28 V, Pout = 1.0 W, f = 2.0 GHz)

GPB

9.0

—

—

dB

MRW2001

Common–Base Amplifier Power Gain

(VCE = 28 V, Pout = 3.0 W, f = 2.0 GHz)

GPB

8.0

—

—

dB

MRW2003

Collector Efficiency

(VCE = 28 V, Pout = 1.0 W, f = 2.0 GHz)

(VCE = 28 V, Pout = 3.0 W, f = 2.0 GHz)

MRW2001

MRW2003

Load Mismatch

(VCE = 28 V, f = 2.0 GHz, Load VSWR = ∞:1, All Phase Angles)

Pout = 1.0 W

MRW2001

Pout = 3.0 W

MRW2003

Saturated Output Power

(VCE = 28 V, f = 2.3 GHz)

(VCE = 28 V, f = 1.5 GHz)

(VCE = 28 V, f = 1.0 GHz)

(VCE = 28 V, f = 2.3 GHz)

(VCE = 28 V, f = 1.5 GHz)

(VCE = 28 V, f = 1.0 GHz)

MRW2001

MRW2003

η

ψ

Psat 1

Psat 2

Psat 3

40

—

—

%

No Degradation in Output Power

W

—

1.0

—

—

1.2

—

—

1.3

—

—

3.0

—

—

3.7

—

—

4.0

—

MRW2001 MRW2003

2

MOTOROLA RF DEVICE DATA

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