STP24NF10(2000) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP24NF10
(Rev.:2000)

N - CHANNEL 100V - 0.07Ω - 24A TO-220 LOW GATE CHARGE STripFET POWER MOSFET

STMicroelectronics 

STP24NF10

THERMAL DATA

Rthj-case

R th j -a mb

Tl

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Maximum Lead Temperature F or Soldering Purpose

1 .8 7

6 2. 5

3 00

oC/W

oC/W

oC

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

OFF

Symbo l

V (BR)D SS

IDSS

IGSS

P ar am et e r

Test Conditions

Dr ain- s our c e

Breakdown Voltage

ID = 250 µA VGS = 0

Zero Gate Voltage

VDS = Max Rat ing

Drain Current (VGS = 0) VDS = Max Rat ing

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20 V

Tc =125 oC

Min.

100

Typ. Max.

1

10

± 100

Unit

V

µA

µA

nA

ON (∗)

Symbo l

VGS(th)

RDS(on)

ID(o n)

P ar am et e r

Test Conditions

Gat e Threshold Voltage VDS = VGS ID = 250 µA

Static Drain-source On VGS = 10 V

Resistance

ID = 12 A

On State Drain Current VDS > ID(o n) x RDS(on )max

VGS = 10 V

Min.

2

Typ.

3

0.07

Max.

4

0.077

Unit

V

Ω

24

A

DYNAMIC

Symbo l

gfs (∗)

Ciss

Coss

Crss

P ar am et e r

Forward

Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS > ID(o n) x RDS(on )ma x ID =12 A

VDS = 25 V f = 1 MHz VGS = 0

Min.

Typ.

20

Max.

Unit

S

870

pF

125

pF

52

pF

2/6

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