STS2NF100 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STS2NF100 Datasheet PDF : 8 Pages
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STS2NF100
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 50 V
ID = 1 A
6
ns
tr
Rise Time
RG = 4.7 Ω
VGS = 10 V
10
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD= 80V ID= 1A VGS=10V
10
nC
2.5
nC
4
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-Voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 50 V
ID = 1 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
Vclamp = 80 V
ID = 1 A
RG = 4.7Ω
VGS = 10 V
(Inductive Load, Figure 5)
Min.
Typ.
20
3
19
8
15
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 2 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 2 A
di/dt = 100A/µs
VDD = 10 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
70
175
5
Max.
6
24
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/8
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