STD7NS20T4 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STD7NS20T4 Datasheet PDF : 8 Pages
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STD7NS20 / STD7NS20-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
2.7
Rthj-amb Thermal Resistance Junction-ambient Max
100
Tl
Maximum Lead Temperature For Soldering Purpose
275
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
7
60
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
200
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
1
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±100
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 3.5 A
Min. Typ. Max. Unit
2
3
4
V
0.35 0.40
Ω
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 3.5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
4
540
90
35
Max.
Unit
S
pF
pF
pF
2/8
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