STGW20NB60H View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STGW20NB60H Datasheet PDF : 8 Pages
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®
STGW20NB60H
N-CHANNEL 20A - 600V TO-247
PowerMESH™ IGBT
TYPE
VCES
VCE(sat)
IC
STGW 20NB60H 600 V < 2.8 V 20 A
s HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s LOW ON-VOLTAGE DROP (VCESAT)
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s VERY HIGH FREQUENCY OPERATION
s OFF LOSSES INCLUDE TAIL CURRENT
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS
s WELDING EQUIPMENTS
s SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
23
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES Collector-Emitter Volt age (VGS = 0)
VECR
VGE
IC
IC
Emitter-Collector Voltage
G ate-Emitter Voltage
Collector Current (continuous) at Tc = 25 oC
Collector Current (continuous) at Tc = 100 oC
ICM(•)
Ptot
Collector Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
Ts tg Storage T emperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1999
V a lu e
600
20
± 20
40
20
160
150
1 .2
-65 to 150
150
Unit
V
V
V
A
A
A
W
W /o C
oC
oC
1/8
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