STGW20NB60H View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STGW20NB60H Datasheet PDF : 8 Pages
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STGW20NB60H
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-h
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-heatsink
Max
Max
Typ
0 .8 3
30
0. 1
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
OFF
Symbol
V BR(CES)
ICES
IGES
Parameter
Collector-Emitt er
Breakdown Voltage
Collector cut-off
(VGE = 0)
Gate-Emitter Leakage
Current (VCE = 0)
Test Conditions
IC = 250 µA VGE = 0
VCE = Max Rat ing
VCE = Max Rat ing
VGE = ± 20 V
Tj = 25 oC
Tj = 125 oC
VCE = 0
Min.
600
Typ. Max. Unit
V
10
µA
100
µA
± 100 nA
ON (∗)
Symbol
VGE(th)
VCE(SAT )
Parameter
Gate Threshold
V ol ta ge
Collector-Emitt er
Saturation Voltage
Test Conditions
VCE = VGE IC = 250 µA
Min. Typ. Max. Unit
3
5
V
VGE = 15 V IC = 20 A
VGE = 15 V IC = 20 A Tj = 125 oC
2.3
2.8
V
1.9
V
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
gf s
Forward
Transconductance
VCE =25 V IC = 20 A
7.0
10
S
Cies
Co es
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VCE = 25 V f = 1 MHz VGE = 0
1200 1700 2200 pF
140 200 260
pF
28
40
52
pF
QG
QGE
QGC
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480 V
IC = 20 A VGE = 15 V
110 145 nC
13
nC
51
nC
ICL
Latching Current
Vclamp = 480 V
RG=10 Ω 80
A
Tj = 150 oC
SWITCHING ON
Symbol
td(on)
tr
( di / dt ) o n
Eo n
Parameter
Delay Time
Rise Time
Turn-on Current Slope
Turn-on
Switching Losses
Test Conditions
VCC = 480 V
VGE= 15 V
IC = 20 A
RG = 10Ω
VCC = 480 V
RG = 10 Ω
Tj = 125 oC
IC = 20 A
VGE = 15 V
Min.
Typ.
20
70
350
300
Max.
U nit
ns
ns
A/µs
µJ
2/8
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