GW20NB60KD View Datasheet(PDF) - STMicroelectronics
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Description
Manufacturer
GW20NB60KD Datasheet PDF : 11 Pages
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STGW20NB60KD
Table 3: Absolute Maximum ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage (VGS = 0)
VECR
Reverse Battery Protection
VGE
Gate-Emitter Voltage
IC
Collector Current (continuous) at 25°C (#)
IC
Collector Current (continuous) at 100°C (#)
ICM (1) Collector Current (pulsed)
TSC
Short Circuit Withstand
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Tstg
Storage Temperature
Tj
Operating Junction Temperature
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Value
600
20
± 20
50
25
100
10
170
1.2
– 55 to 150
Unit
V
V
V
A
A
A
µs
W
W/°C
°C
Min.
--
--
Typ.
--
--
Max.
0.73
50
°C/W
°C/W
Electrical Characteristics (Tcase =25°C unless otherwise specified)
Table 5: Off
Symbol
Parameter
VBR(CES) Collectro-Emitter Breakdown
Voltage
ICES
Collector-Emitter Leakage
Current (VCE = 0)
IGES
Gate-Emitter Leakage
Current (VCE = 0)
Test Conditions
IC = 250 µA, VGE = 0
VGE = Max Rating
Tc=25°C
Tc=125°C
VGE = ± 20 V , VCE = 0
Min.
600
Typ.
Max. Unit
V
10
µA
100
µA
± 100 nA
Table 6: On
Symbol
Parameter
VGE(th) Gate Threshold Voltage
VCE(SAT) Collector-Emitter Saturation
Voltage
(#) Calculated according to the iterative formula:
Test Conditions
VCE= VGE, IC= 250 µA
VGE= 15 V, IC= 20A, Tj= 25°C
VGE= 15 V, IC= 20A,
Tj= 125°C
Min.
5
Typ.
2.3
1.9
Max. Unit
7
V
2.8
V
V
IC (TC) = -R----T----H-----J----–----C------×----T-V---J-C--M---E---A-S----AX----T-–----(-T-M---C---A-----X----)--(--T----C----,---I--C----)
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