STD100N03L-1 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STD100N03L-1

N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ II Power MOSFET

STMicroelectronics 

STD100N03L - STD100N03L-1

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD= 15V, ID= 40A,

RG=4.7Ω, VGS=10V

Figure 14 on page 9

Min. Typ. Max. Unit

9

ns

205

ns

31

ns

35

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min Typ. Max Unit

ISD Source-drain current

80 A

ISDM(1) Source-drain current (pulsed)

320 A

VSD(2) Forward on voltage

ISD = 40A, VGS = 0

t(s) trr

c Qrr

du IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 80A,

di/dt = 100A/µs,

VDD = 25V, TJ = 150°C

Figure 16 on page 9

ro 1. Pulse width limited by safe operating area

Obsolete Product(s) - Obsolete P 2. Pulsed: pulse duration=300µs, duty cycle 1.5%

1.3 V

40

ns

40

µC

2

A

5/15

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