STW200NF03 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STW200NF03

N-CHANNEL 30V - 0.002 Ω - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET™ II MOSFET

STMicroelectronics 

STW200NF03

N-CHANNEL 30V - 0.002 Ω - 120A TO-247

ULTRA LOW ON-RESISTANCE STripFET™ II MOSFET

TYPE

VDSS

RDS(on)

STW200NF03

30V <0.0028Ω

s TYPICAL RDS(on) = 0.002 Ω

s 100% AVALANCHE TESTED

ID

120A

DESCRIPTION

This Power MOSFET series realized with STMicroelec-

tronics unique STripFET process has specifically been

designed to minimize input capacitance and gate charge.

It is particularly suitable in OR-ing function circuits and

synchronous rectification.

APPLICATIONS

s HIGH-EFFICIENCY DC-DC CONVERTERS

s HIGH CURRENT, HIGH SWITCHING SPEED

s OR-ING FUNCTION

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID(•)

Drain Current (continuous) at TC = 25°C

ID

Drain Current (continuous) at TC = 100°C

IDM(••) Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25°C

Derating Factor

dv/dt (1) Peak Diode Recovery voltage slope

EAS (2) Single Pulse Avalanche Energy

Tstg

Storage Temperature

Tj

Operating Junction Temperature

(••) Pulse width limited by safe operating area.

(•)Current limited by package

October 2002

Value

30

30

± 20

120

120

480

350

2.33

1.5

4

Unit

V

V

V

A

A

A

W

W/°C

V/ns

J

-55 to 175

°C

(1) ISD ≤120A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(2) Starting Tj = 25 oC, ID = 60 A, VDD= 15V

1/8

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