STB160NF3LL View Datasheet(PDF) - STMicroelectronics
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Description
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STB160NF3LL Datasheet PDF : 7 Pages
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STB160NF3LL
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON (*)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 15 V
ID = 80 A
50
ns
RG = 4.7 Ω
VGS = 4.5 V
350
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD=24V ID=160A VGS=5V
95
125
nC
25
nC
45
nC
SWITCHING OFF(*)
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 15 V
ID = 80 A
RG = 4.7Ω,
VGS = 4.5 V
(Resistive Load, Figure 3)
Min.
Typ.
150
120
Max.
Unit
ns
ns
SOURCE DRAIN DIODE(*)
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 160 A VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by Tjmax
ISD = 160 A di/dt = 100A/µs
VDD = 15 V Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
90
200
5
Max.
160
640
1.3
Unit
A
A
V
ns
nC
A
3/7
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