STB70NFS03L View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STB70NFS03L

N-channel - 30V - 0.0075Ω - 70A D2PAK STripFET™ Power MOSFET plus schottky rectifier

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STB70NFS03L

(Tcase =25°C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

V(BR)DSS

Drain-source

breakdown voltage

ID = 250µA, VGS = 0

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

VDS = Max rating

drain current (VGS = 0) VDS = Max rating, TC=125°C

Gate-body leakage

current (VDS = 0)

VGS = ± 18V

Gate threshold voltage VDS = VGS, ID = 250µA

Static drain-source on VGS = 10V, ID = 35A

resistance

VGS = 5V, ID = 18A

Min. Typ. Max. Unit

30

V

200 µA

20 mA

± 100 nA

1

V

0.0075 0.0095 Ω

0.0135 0.018 Ω

Table 5. Shottcky static

Symbol

Parameter

Test conditions

IR

Reverse leakage

current

Tj = 25°C VR = 30V

Tj = 100°C VR = 30V

VF

Zero gate voltage

Tj = 25°C IF = 3A

drain current (VGS = 0) Tj = 125°C IF = 3A

Min.

Typ.

0.03

0.425

Max. Unit

0.2 mA

100 mA

0.51 V

0.46 V

Table 6. Dynamic

Symbol

Parameter

gfs

Ciss

Coss

Crss

Qg

Qgs

Qgd

Forward

transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

Total gate charge

Gate-source charge

Gate-drain charge

Test conditions

Min. Typ. Max. Unit

VDS = 25V, ID = 35A

25

S

VDS = 25 V, f = 1 MHz, VGS = 0

VDD = 15V, ID = 70A,

VGS = 5V

(see Figure 11)

1440

pF

560

pF

135

pF

22.5 30 nC

9

nC

12

nC

4/13

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