STB70NF03L-1(2001) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STB70NF03L-1
(Rev.:2001)

N-CHANNEL 30V - 0.008Ω - 70A TO-220/I2PAK LOW GATE CHARGE STripFET™ POWER MOSFET

STMicroelectronics 

STP70NF03L/STB70NF03L-1

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max

1.5

Rthj-amb Thermal Resistance Junction-ambient Max

62.5

Tl

Maximum Lead Temperature For Soldering Purpose

300

°C/W

°C/W

°C

AVALANCHE CHARACTERISTICS

Symbol

Parameter

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Max Value

35

450

Unit

A

mJ

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

30

V

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

µA

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 15V

±100

nA

ON (1)

Symbol

VGS(th)

RDS(on)

ID(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

On State Drain Current

Test Conditions

VDS = VGS, ID = 250µA

VGS = 10 V, ID = 35 A

VGS = 5 V, ID = 18 A

VDS > ID(on) x RDS(on)max,

VGS = 10V

Min.

1

70

Typ.

2

0.008

0.015

Max.

0.01

0.018

Unit

V

Ω

Ω

A

DYNAMIC

Symbol

gfs (1)

Parameter

Forward Transconductance

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS > ID(on) x RDS(on)max,

ID = 35 A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

40

1470

490

110

Max.

Unit

S

pF

pF

pF

2/9

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