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Part Name
Description
STD40NF3LLT4 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STD40NF3LLT4
N-channel 30V - 0.009Ω - 40A - DPAK Low gate charge STripFET™ II Power MOSFET
STMicroelectronics
STD40NF3LLT4 Datasheet PDF : 13 Pages
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Electrical characteristics
2
Electrical characteristics
STD40NF3LL
(T
CASE
=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V
(BR)DSS
breakdown voltage
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
I
GSS
V
GS(th)
R
DS(on)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I
D
= 250
µ
A, V
GS
=0
V
DS
= max rating
V
DS
= max rating,
T
C
= 125°C
V
GS
= ±16V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 10A
30
V
1
µA
10
µA
±100 nA
1
V
0.0090 0.0110
Ω
0.0115 0.0135
Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
g
fs
(1)
Forward
transconductance
V
DS
= 15V
,
I
D
= 20A
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1MHz,
V
GS
= 0
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 15V, I
D
= 20A
R
G
= 4.7
Ω
V
GS
=4.5V
(see
Figure 13
)
Q
g
Total gate charge
Q
gs
Gate-source charge
Q
gd
Gate-drain charge
V
DD
=
15V, I
D
= 20A,
V
GS
= 4.5V, R
G
= 4.7
Ω
(see
Figure 14
)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
23
S
1650
pF
540
pF
130
pF
23
ns
156
ns
27
ns
28
ns
24
33
nC
8.5
nC
12
nC
4/13
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