STD40NF03L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STD40NF03L
STMicroelectronics
STD40NF03L Datasheet PDF : 13 Pages
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Electrical characteristics
2
Electrical characteristics
STD40NF03L
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250µA, VGS =0
VDS = max rating
VDS = max rating,
TC = 125°C
VGS = ± 20V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 20A
VGS = 5V, ID = 10A
30
V
1
µA
10
µA
±100 nA
1
V
0.0090 0.0110 Ω
0.0150 0.0195 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS = 15V, ID = 20A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 15V, ID = 20A
RG = 4.7Ω VGS = 5V
(see Figure 13)
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 15V, ID = 40A,
VGS = 5V, RG = 4.7Ω
(see Figure 14)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
23
S
1440
pF
560
pF
135
pF
22
ns
165
ns
21
ns
25
ns
22.5 30
nC
9
nC
12
nC
4/13
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