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STP30NE03L View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP30NE03L Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STP30NE03L
®
STP30NE03LFP
N - CHANNEL 30V - 0.028 - 30A TO-220/TO-220FP
STripFETPOWER MOSFET
TYPE
VDSS
RDS( on )
STP30NE03L
S TP30N E03LF P
30 V
30 V
< 0.04
< 0.04
s TYPICAL RDS(on) = 0.028
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s LOW THRESHOLD DRIVE
ID
30 A
17 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Pa ram et er
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS
ID
ID
IDM()
Ptot
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
VISO I nsulation W ithstand Voltage (DC)
Ts tg Storage T emperature
Tj
Max. O perating Junct ion T emperature
() Pulse width limited by safe operating area
June 1999
Va l u e
STP30NE03L STP30NE03LFP
30
30
± 20
30
17
21
12
120
68
70
25
0.47
0.17
20 00
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/9

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