GD3NB60SD View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
GD3NB60SD Datasheet PDF : 9 Pages
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STGD3NB60SD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES
Collector-Emitter Voltage (VGS = 0)
VGE
Gate-Emitter Voltage
IC
Collector Current (continuous) at TC = 25°C
IC
Collector Current (continuous) at TC = 100°C
ICM ( ) Collector Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
Value
600
± 20
6
3
25
48
0.32
– 65 to 175
175
Unit
V
V
A
A
A
W
W/°C
°C
°C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
3.125
100
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
VBR(CES) Collectro-Emitter Breakdown IC = 250 µA, VGE = 0
600
V
Voltage
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating, TC = 25 °C
VCE = Max Rating, TC = 125 °C
10
µA
100
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ±20V , VCE = 0
±100
nA
ON (1)
Symbol
VGE(th)
VCE(sat)
Parameter
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
Test Conditions
VCE = VGE, IC = 250µA
VGE = 15V, IC = 1.5 A
VGE = 15V, IC = 3 A
VGE = 15V, IC = 7 A, TJ =125 °C
Min.
2.5
Typ.
1
1.2
1.1
Max.
4.5
1.5
Unit
V
V
V
V
DYNAMIC
Symbol
gfs
Cies
Coes
Cres
QG
QGE
QGC
ICL
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current
Test Conditions
VCE = 10 V , IC = 3 A
VCE = 25V, f = 1 MHz, VGE = 0
Min.
1.7
VCE = 480 V, IC = 3 A,
VGE = 15V
Vclamp = 380 V , Tj = 25°C
15
RG = 1KΩ
Typ.
2.5
255
30
5.6
18
5.4
5.5
Max.
23
Unit
S
pF
pF
pF
nC
nC
nC
A
2/9
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