GD3NB60SD View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
GD3NB60SD Datasheet PDF : 9 Pages
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STGD3NB60SD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VCC = 480 V, IC = 3 A
RG = 1KΩ , VGE = 15 V
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching Losses
VCC= 480 V, IC = 3 A, RG=1KΩ
VGE = 15 V, Tj = 125°C
SWITCHING OFF
Symbol
Parameter
tc
tr(Voff)
td(on)
tf
Eoff(**)
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
tc
tr(Voff)
td(on)
tf
Eoff(**)
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Test Conditions
Vcc = 480 V, IC = 3 A,
RGE = 1KΩ , VGE = 15 V
Vcc = 480 V, IC = 3 A,
RGE = 1KΩ , VGE = 15 V,
Tj = 125°C
Min.
Min.
Typ.
125
150
50
1100
Typ.
1.8
1.0
3.4
0.72
1.15
2.8
1.45
3.6
1.2
1.8
Max.
Max.
Unit
µs
µs
A/µs
µJ
Unit
µs
µs
µs
µs
mJ
µs
µs
µs
µs
mJ
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
If
Forward Current
Ifm
Forward Current pulsed
Vf
Forward On-Voltage
If = 3 A
If = 1 A
trr
Reverse Recovery Time
If = 3 A ,VR = 200 V,
Qrr
Reverse Recovery Charge Tj =125°C, di/dt = 100A/µs
Irrm
Reverse Recovery Current
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**) Losses also include the Tail (Jedec Standardization)
Thermal Impedance
Min.
Typ.
1.55
1.15
1700
4500
9.5
Max.
3
25
1.9
Unit
A
A
V
V
ns
nC
A
3/9
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