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Part Name
Description
STB100NF04(2007) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STB100NF04
(Rev.:2007)
N-channel 40V - 0.0043Ω - 120A - TO-220 - D2PAK STripFET™ II Power MOSFET
STMicroelectronics
STB100NF04 Datasheet PDF : 17 Pages
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STB100NF04 - STP100NF04
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I
SD
I
SDM(1)
V
SD(2)
Source-drain Current
Source-drain Current (pulsed)
Forward on Voltage
I
SD
=120A, V
GS
=0
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse recovery Current
I
SD
=120A, V
DD
=20V,
di/dt=100A/µs, Tj=150°C
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
120 A
480 A
1.3 V
75
ns
185
nC
5
A
5/17
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