STW20NK50Z(2003) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STW20NK50Z
(Rev.:2003)
(Rev.:2003)
STMicroelectronics
STW20NK50Z Datasheet PDF : 7 Pages
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STP20NK50Z - STW20NK50Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
ID = 1 mA, VGS = 0
500
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
1
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
50
IGSS
Gate-body Leakage
VGS = ± 20V
±10
Current (VDS = 0)
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250µA
3
3.75
4.5
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 10 A
0.23 0.27
DYNAMIC
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Coss eq. (3) Equivalent Output
Capacitance
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDS = 8 V, ID = 10 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
VGS = 0V, VDS = 0V to 400V
Test Conditions
VDD = 250 V, ID = 10 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 400V, ID = 20 A,
VGS = 10V
Min.
Typ.
TBD
2600
400
55
TBD
Typ.
TBD
TBD
95
TBD
TBD
Max.
Max.
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 250 V, ID = 10 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 400V, ID = 20 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
Min.
Typ.
TBD
TBD
TBD
TBD
TBD
Max.
Unit
V
µA
µA
µA
V
Ω
Unit
S
pF
pF
pF
pF
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
TBD
A
TBD
A
VSD (1) Forward On Voltage
ISD = 20 A, VGS = 0
TBD
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 20 A, di/dt = 100A/µs
VDD = 35V, Tj = 150°C
(see test circuit, Figure 5)
TBD
ns
TBD
µC
TBD
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/7
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