STW20NM50FD View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STW20NM50FD

N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh™ Power MOSFET (with FAST DIODE)

STMicroelectronics 

STW20NM50FD

N-CHANNEL 500V - 0.22Ω - 20A TO-247

FDmesh™ Power MOSFET (with FAST DIODE)

TYPE

VDSS

RDS(on)

ID

STW20NM50FD

500V

<0.25Ω

20 A

s TYPICAL RDS(on) = 0.22Ω

s HIGH dv/dt AND AVALANCHE CAPABILITIES

s 100% AVALANCHE TESTED

s LOW INPUT CAPACITANCE AND GATE CHARGE

s LOW GATE INPUT RESISTANCE

s TIGHT PROCESS CONTROL AND HIGH

MANUFACTURING YIELDS

DESCRIPTION

The FDmesh™ associates all advantages of reduced

on-resistance and fast switching with an intrinsic fast-

recovery body diode. It is therefore strongly recom-

mended for bridge topologies, in particular ZVS phase-

shift converters.

APPLICATIONS

s ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS

FOR SMPS AND WELDING EQUIPMENT

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuos) at TC = 25°C

ID

Drain Current (continuos) at TC = 100°C

IDM (q) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

June 2002

Value

500

500

±30

20

14

80

214

1.42

20

–65 to 150

150

(1)ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*)Limited only by maximum temperature allowed

Unit

V

V

V

A

A

A

W

W/°C

V/ns

°C

°C

1/8

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